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Aluminium oxide is a bio-inert chemical material that is used in the manufacturing of high-temperature furnace insulation, adsorption and tunnel barriers for superconducting devices, and other electrical insulators. Besides, aluminium oxide is also used as a dielectric coating paste in planar oxygen sensors, and in 3D printing of electronic components.
The present invention relates to a method for producing pure Al2O3 layers on monocrystalline silicon wafers. It comprises the steps of cleaning the multicrystalline silicon wafer with hydrofluoric acid (HF), heating the wafer to a temperature above 1000deg. C., and drying the wafer at a temperature of at least 300deg. C. A hard Al2O3 layer is formed and has a comparable structure to corundum. This type of pastes has excellent mechanical properties and a lower porosity.
Aluminum oxide is an excellent tribological material. In fact, it has been widely used as a base element for sapphires and rubies. Moreover, aluminum oxide is commonly used in ceramic industries. Besides, it is a cheap substitute for industrial diamonds.
Various techniques can be used to manufacture aluminium oxide. These include acidic (pH 4.5 in water) and basic (pH 9.5) formulations. Additionally, a paste can be obtained by a process called sol-gel. Another method involves a rheological additive. However, the additives can be contaminated with impurities after grinding. Therefore, the long-term stability of the paste should be retained while avoiding impurities.
Another technique is the use of a chelating agent. Moreover, the paste can be made into inks for 3D printing. Also, the paste can be used for producing corrosion-protection layers.
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